Characterization of GaAs MESFETs using novel test fixtures.

Awang, Zaiki and Kamal Ariffin, Mohd Gaddafi (2002) Characterization of GaAs MESFETs using novel test fixtures. In: INSIGHTS Seminar 2002, 24-25 August 2002, Putra World Trade Centre (PWTC).

Abstract

This paper reports on the characterization of GaAs MESFETs using novel test fixtures. The S-parameters of NEC NE76038 MESFETs were measured from 4 to 12 GHz using the fixtures in conjunction with a Wiltron 37269B vector network analyser. The test fixtures were constructed in-house using microstrip laminates having relative permitivity 2.33, and substrate and copper thicknesses of 0.5 mm and 0.0356 mm respectively. The results obtained from the measurement were found to agree quite well with data supplied by the manufacturer.

Item Details

Item Type:	Conference or Workshop Item (Paper)
Creators:	Creators Email / ID Num. Awang, Zaiki UNSPECIFIED Kamal Ariffin, Mohd Gaddafi UNSPECIFIED
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Microwaves. Including microwave circuits
Divisions:	Universiti Teknologi MARA, Shah Alam > Research Management Centre (RMC) > Institute of Research, Development and Commercialization (IRDC) > Bureau of Research and Consultancy
Event Title:	INSIGHTS Seminar 2002
Event Dates:	24-25 August 2002
Page Range:	pp. 161-170
Keywords:	GaAs MESFET, S-Parameter measurement, Test fixtures, Vector network analyzer, Microwave characterization.
Date:	2002
URI:	https://ir.uitm.edu.my/id/eprint/143103

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