Rosley, Nor Syazwani and Ab. Kadir, Rosmalini
(2010)
Doping charactristics of zinc oxide thin films deposited by thermal chemical vapour deposition : article.
pp. 1-6.
Abstract
Nitrogen (N)-doped Zinc Oxide (ZnO) films were deposited on glass substrate by thermal chemical vapour deposition (CVD) process. Nitrogen gas with different flow rate was used as a dopant source. The effects of varying the carrier gas flow rate to the Zinc Oxide thin film electrical properties were investigated. In this experiment, it is found that NST N-doped ZnO thin film with 60 bubbles/min of nitrogen gas flow rate has optimum electrical properties with high conductivity. The types of metal contact used were gold-gold (Au-Au), gold-platinum (Au-Pt), gold-palladium (Au-Pd). AuAu contact with lowest resistivity obtained was observed as the best metal contact.
Metadata
| Item Type: | Article |
|---|---|
| Creators: | Creators Email / ID Num. Rosley, Nor Syazwani 2006687130 Ab. Kadir, Rosmalini UNSPECIFIED |
| Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Metal oxide semiconductors |
| Divisions: | Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering |
| Page Range: | pp. 1-6 |
| Keywords: | Zinc oxide, Nitrogen-doped Zinc Oxide, Thin films, Nanostructures, Thermal CVD method, metal contacts. |
| Date: | May 2010 |
| URI: | https://ir.uitm.edu.my/id/eprint/123144 |
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