Effect of substrate temperature and catalyst annealing treatment on the of growth Zinc OIxide by TCVD for sensor application

In this project, ZnO thin film were deposited by using Thermal Chemical Vapor Deposition. The growth of ZnO nanostructures was studied on the effect of the substrate temperature and metal catalyst annealing treatment. The substrate temperature was varied between 400°C, 450°C and 500°C. Meanwhile, the process of metal catalyst annealing treatment was varied at 15 min, 30 min and as deposited sample. The field emission scanning electron microscope (FESEM) was used to determine the ZnO morphology and its cross-section. The crytallinity of the sample was examined by using X-ray Diffraction (XRD). Then the thin film were also being tested by using extended gate field effect transistor (EGFET). Lastly, the growth of ZnO nanostructures and sensitivity measurement was clearly observed.