Study electrical characteristics of 90 nm NMOS using SILVACO

In this paper, a 90 nm NMOS was designed and fabricate to study its electrical characteristics. ATHENA and ATLAS module of SILVACO software are the tools used in simulating the electrical performance of the transistor. The parameters under investigation were the VTH, Id-Vg and Id-Vd relationship. From the simulation result, it was shown that the gate oxide thickness, channel doping, VTH adjust implant and the dosage of halo implantation were contribute in determining the VTH value and Id-Vg curve. From the simulation result, optimum solution is found in which VTH value of 0.2685 is achieved. The value is in line with ITRS guideline for 90 nm device.