Deposition of undoped amorphous carbon thin film on insulator glass substrave by bias assisted thermal-CVD system: article

Amorphous carbon thin films were successfully deposited by the bias assisted thermal-CVD system on insulator glass substrates at various deposition temperatures in the range of 300°C-500°C. The deposited of amorphous carbon thin films are characterized by using I-V measurement, UVVIS-NIR spectrophotometer and Atomic Force Microscopy (AFM). The electrical properties of amorphous carbon thin films were found more conductivity when the temperature is increased. In contrast the optical band gap decreased for high deposition temperature. The AFM images show that, density and uniformity have correlated with the resistivity and conductivity for undoped amorphous carbon thin films deposited at various temperatures.