Investigation of electrical characteristics of partially depleted SOI device

Well constructed models for n-type n-MOSFET using bulk technology and partially depleted (PD) silicon on insulator (SOI) technology had been developed. The models were simulated using Silvaco-Athena software to find electrical properties such as threshold voltage, sub-threshold and leakage current. Comparison of electrical properties for both technology and channel length were done accordingly from each result. This paper was focus on investigation of the electrical characteristics of the devices at 0.5 micron and 0.35 micron channel length. Silvaco Athena structure and simulation results using Atlas were presented, that shows PD SOI technology is better than Bulk technology in the small scaling of channel length.