Doping characteristics of zinc oxide thin films deposited by thermal chemical vapour deposition

Rosley, Nor Syazwani (2010) Doping characteristics of zinc oxide thin films deposited by thermal chemical vapour deposition. [Student Project] (Unpublished)

Abstract

Nitrogen (N)-doped Zinc Oxide (ZnO) films were deposited on glass substrate by thermal chemical vapour deposition (CVD) process. Nitrogen gas with different flow rate was used as a dopant source. The effects of varying the carrier gas flow rate to the Zinc Oxide thin film electrical properties were investigated. In this experiment, it is found that NST N-doped ZnO thin film with 60 bubbles/min of nitrogen gas flow rate has optimum electrical properties with high conductivity. The types of metal contact used were gold-gold (Au-Au), gold-platinum (Au-Pt), gold-palladium (Au-Pd). AuAu contact with lowest resistivity obtained was observed as the best metal contact.

Metadata

Item Type:	Student Project
Creators:	Creators Email / ID Num. Rosley, Nor Syazwani 2006687130
Contributors:	Contribution Name Email / ID Num. Advisor Ab. Kadir, Rosmalini UNSPECIFIED
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Metal oxide semiconductors
Divisions:	Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme:	Bachelor of Electrical Engineering (Hons)
Keywords:	Zinc oxide, Nitrogen-doped Zinc Oxide, Thin films, Nanostructures, Thermal CVD method, metal contacts.
Date:	2010
URI:	https://ir.uitm.edu.my/id/eprint/121774