Analysis and simulation on the performance enhancement mechanism of the PMOS device based on strained SiGe

This project is done to design the Sio.gGeo.2 on a relaxed silicon substrate Si PMOS semiconductor and to compare the electrical characteristics with the Si PMOS using a device simulator SILVACO. Firstly, the device structure of Si PMOS is created as a control device. Then the device structure of Si08Geo2 PMOS Si is developed. The simulation of the electrical characteristics is done and compared with the process of the device structures. The comparisons between Si PMOS and SiGe/Si PMOS characteristics are discussed and analyzed. From the electrical characteristics, the extracted results will prove that the Sio.sGeo 2 PMOS Si gives better performance as compared to the control device. Based on the simulated results, the strained SiGe/Si PMOS heterostructure influences the threshold voltage, VT. The threshold voltage is extremely important in determining the performance of MOS-based devices. Besides that, the effects of hole and electron concentrations as well as the effect of electric field of both PMOS Si and PMOS SiGe devices are presented.