Influence of doping concentration and thickness of n and p-type on the efficiency performance of silicon solar cell using simulation approach

This research explores the influence of n and p-type doping concentrations and thicknesses on silicon solar cell efficiency. To address this, researchers employ a range of software options for investigating photovoltaic cells, such as the Silvaco tool, Midian, and PC1D software. However, to complete this investigation, PC1D software was chosen. Personal Computer One Dimensional (PC1D) is ideal for any solar cell simulation. The goal of this research is to examine insights into the numerical modelling of silicon solar cells using the PC1D programme, the design of silicon solar cells with high efficiency by changing ideal features, and the impact of parameters on the IV characteristic of silicon solar cells. Furthermore, the goal of this research is to identify the best efficiency in the design of silicon solar cells by adjusting parameter values such as doping concentration and thickness of n and p-type value on IV characteristics. In this investigation, the researcher was only interested in the IV properties of silicon solar cells. To maximise design efficiency, use a surface area of 100cm2, a doping concentration and thickness with 1 × 1017 cm-3 and 0.05μm for the n-type, and 1 × 1017cm-3 and 290μm for the p-type. The final design's efficiency is 22.58%, and the maximum power output is 2.258 watts.