A study on effect of N-well to the threshold voltage in 65 nm NMOS structure: article / Ahmad Luqman Mohammed Shaihani

A study on effect of N-well to the threshold voltage in 65 nm NMOS structure was conducted. The N-well in this paper refers to source and drain regions. Few parameters including concentration and energy that effect source and drain implantation have been altered using impurity of phosphorus. For annealing process, several parameters presented also were varied to get the optimum value of threshold voltage (Vth) that was 0.182929V which approximately closed to the recommended guideline from ITRS. All simulations were done by using SILVACO.