Properties of iodine doping in amorphous carbon thin films grown by chemical vapor deposition (CVD) method: article / Norshamimi Ahmad

In this work, the influence of iodine doping on the electrical, optical, and structural properties of amorphous carbon (a-C) thin films that deposited on glass and quartz substrate at varied temperature ranging from 500 °C to 700 °C by thermal chemical vapor deposition (CVD) technique using argon (Ar) as carrier gas were reported. The films were characterized by Perkin Elmer (LAMBDA 750) UV/VIS/NIR spectrophotometer for optical properties, BUKOH KEIKI (CEP200) Solar Simulator for electrical properties, and Raman spectroscope for structural properties. The I-V measurement revealed that I-doping increased the conductivity as the temperature increased. The optical band gap decreased from 1.0 eV to 0.15 eV due to the condition of undoped and iodine doped of the thin films. The Raman spectral result which was measured using Raman Spectroscopy HORIBA Jobin Yvon (HR800) shows that graphitization of the films intensified after iodine doping is introduced. The surface morphology of the thin films was measured by Atomic force microscopy (AFM) which indicates the roughness of the films.