Simulation and characterization of high voltage trench MOS barrier Schottky diode / Nur 'Izzati Zailan

A diode structure which called High Voltage Trench MOS Barrier Schottky Diode has been designed and described in this paper. This type of diode has high voltage blocking capability that suitable to be used for rectifier circuits in various applications such as solar cells, reverse battery protection, switching power supply, dc-to-dc converter and many more. This Schottky diode has low forward voltage, low leakage current and high reverse voltage characteristics. In this study, deep trench MOS structures were introduced to the conventional Schottky diode which then increased the reverse voltage blocking capability. It was confirmed by simulation results which the trench structure has reduced the electric field at silicon surface and distribute it into the silicon bulk hence increasing the breakdown voltage. This trench structure of Schottky Diode has been characterized by looking at the forward and reverse characteristics. From the simulation result, the device is capable to hold higher breakdown voltage which is more than 45 V with lower leakage current. Same electrical characterization has been performed on fabricated sample to support the simulation result. Another critical parameter, gate oxide thickness is also can directly affect the device characteristic. It was experimentally studied and verified which thicker oxide has higher reverse breakdown voltage.