Effect of semiconductor layer thickness on the MIS electrical characterization: article / Safarina Adnan

This paper investigates the electrical properties of metal-insulator-semiconductor (MIS) by varying the thickness of the semiconductor layer. The MIS device was fabricated using ZnO and nanocomposite PMMA: TiO2 as semiconductor and dielectric layer, respectively. Different thickness of ZnO films was obtained by varying the deposition speed from 500 to 3000 rpm. The electrical properties of MIS showed different I-V curve when using different thickness of the semiconductor layer. The AFM image of all ZnO films showed different morphology. The surface roughness of ZnO films were increased as the deposition speed decreased.