Sputtering pressure dependence of Zinc Oxide thin films deposited on Teflon substrate: article / Muhammad Sanusi Adnan

Adnan, Muhammad Sanusi (2012) Sputtering pressure dependence of Zinc Oxide thin films deposited on Teflon substrate: article / Muhammad Sanusi Adnan. pp. 1-5.

Abstract

We report on the characteristics of the Zinc Oxide (ZnO) thin films deposited onto polytetrafluoroethylene (Teflon) substrate by using radio frequency (RF) magnetron sputtering technique. The effect of deposition pressure on the structural, optical and electrical properties of ZnO thin film were investigated. The structural, optical, and electrical properties of the film were investigated by field-effect scanning electron microscope (FESEM), JASCO UV-VISNIR spectrophotometer, and current voltage (I-V) measurement respectively. The surface morphology reveals that deposited ZnO consists of nanoparticles. We found that the thickness and deposition rates of thin films were decreased. Also, the thin films showed the optical transmittance between range 45o/o to 85yo, Optical measurements indicate the existence of band gap allowed optical transition with corresponding energy gap in the range of 3.283.34 eV. The sputtering pressure also found to affect the resistivity and conductivity of the ZnO thin films.

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Item Type: Article
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Adnan, Muhammad Sanusi
UNSPECIFIED
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering
T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Dielectric devices
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Page Range: pp. 1-5
Keywords: Zno thin films, teflon substrate, RF magnetron sputtering, sputlering pressure, electrical and optical properties.
Date: 2012
URI: https://ir.uitm.edu.my/id/eprint/115174
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