The electrical and optical properties of iodine doped amorphous carbon thin films / Hasniza Abd Hamid

The aim in this project is to investigate the effect of amount of iodine doping on its electrical, optical and structural properties. This is important to investigate the optimum weight in order to fabricate the carbon based solar cell that could be used to solve the nonrenewable sources problem. In this project, the amorphous carbon (a-C) thin films have been deposited and doped by using Thermal Chemical Vapor Deposition (TCVD) techniques. The deposited a-C thin films have been doped at different amount of iodine in the fixed conditions. The effect of iodine amounts on the electrical and optical properties of iodine doped a-C thin films have been investigated using Current-Voltage (I-V) measurement, UV-Vis-NIR spectroscopy and Raman spectroscopy. In this project, the amorphous carbon (a-C) thin films have been deposited and doped by using Thermal Chemical Vapor Deposition (TCVD) techniques. The deposited a-C thin films have been doped at different amount of iodine in the fixed conditions. The effect of iodine amounts on the electrical and optical properties of iodine doped a-C thin films have been investigated using Current-Voltage (I-V) measurement, UV-Vis-NIR spectroscopy and Raman spectroscopy. As the amount of iodine increase, the conductivity increase while the optical bandgap decrease from 0.21 eV to 0.15 eV with iodine doping from 0 g to 2 g. Then the optical bandgap increase from 0.15 eV to 0.28 eV as the amount of iodine increase from 2 g to 5 g. This is due to increase of sp2 bonded carbon configuration. The conductivity of the sample increases as the iodine doping increase from 0 g to 2 g. It also shows that iodine doped with 2 g were having the highest photoresponse that may due to neutralization of the dangling bonds. The Raman properties proved that the presences of sp2 and sp3 bonding in the samples.