Resistive switching behavior of sol-gel spin coated zinc oxide thin films on ITO substrates / Ahmad Faiz Mohamad Zohaimi

This work focuses on the resistive switching behavior of sol-gel spin coated zinc oxide (ZnO) thin films on ITO substrate. The deposited ZnO thin films were annealed at various temperatures from 350°C to 500°C in a furnace for 60 minutes in order to study the effect of annealing temperature on the memristive behavior of ZnO thin film. The electrical property of the thin film was characterized using 2-point probe current-voltage (I-V) measurement. The surface morphology and film thickness were examined and measured using AFM and surface profiler respectively. It was found that the samples were followed the memristive behavior as shown in I-V measurement graph.