Submicron relaxed silicon on strained silicongermanium MOSFET / Malyanti Malik

Complementary metal oxide semiconductor (CMOS) is a major class of integrated circuit and it is constructed by n-channel MOS transistor (NMOS) and p-channel MOS transistor (PMOS) on the same substrate. CMOS is also explained as complementary-symmetry metal-oxide semiconductor. The words “complementary-symmetry” here refers to typical digital design with CMOS uses complementary ans symmetrical pairs of n-type and ptype MOSFETs for logic functions. In this project, both NMOS and PMOS of relaxed silicon on strained silicon-germanium were constructed to see the performance of them compared to the conventional MOSFET. Both NMOS and PMOS were developed with channel length of 0.6m. Relaxed silicon is silicon with conventional structure while strained SiGe is an alloy of silicon and germanium structure that have been strained to be fitted with the relaxed silicon. The fraction of silicon-germanium for the MOSFET is 0.5 i.e. Si0.5Ge0.5. In NMOS, dopants choosed is boron (acceptor) while in PMOS, dopants choosed is phosphorus (donor).