PC based physical modelling of Heterojuction Bipolar Transistor / Sharifuddin Alaluddin

Alaluddin, Sharifuddin (1995) PC based physical modelling of Heterojuction Bipolar Transistor / Sharifuddin Alaluddin. Advanced Diploma thesis, Universiti Teknologi MARA (UiTM).

Abstract

A PC based physical modelling of AlGaAs/GaAs Heterojunction Bipolar Transistor (HBT) is used to investigate physical processes which have an impact on device performance. A Drift-Diffusion modelling has been employed and Turbo Pascal is used in its implementation. The programme incorporates Fermi-Dirac statistics, electric field dependent mobilities and Shockley-Read-Hall recombinations. The Scharfetter-Gummel expressions for both electron and hole current densities are used. The simulation can be used to study the influence of conduction band spike, recombination effects and junction misalignment on current voltage characteristics.

Metadata

Item Type:	Thesis (Advanced Diploma)
Creators:	Creators Email / ID Num. Alaluddin, Sharifuddin UNSPECIFIED
Contributors:	Contribution Name Email / ID Num. Advisor Ismail, Ahmad UNSPECIFIED
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electric power distribution. Electric power transmission
Divisions:	Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme:	Advanced Diploma in Electrical Engineering
Keywords:	PC-based physical modelling, drift-diffusion, turbo pascal
Date:	1995
URI:	https://ir.uitm.edu.my/id/eprint/114943