Effect of semiconductor layer thickness on the MIS electrical characterization / Safarina Adnan

Adnan, Safarina (2013) Effect of semiconductor layer thickness on the MIS electrical characterization / Safarina Adnan. Degree thesis, Universiti Teknologi MARA (UiTM).

Abstract

This paper investigates the electrical properties of metal-insulator-semiconductor (MIS) by varying the thickness of the semiconductor layer. The MIS device was fabricated using ZnO and nanocomposite PMMA: TiO2 as semiconductor and dielectric layer, respectively. Different thickness of ZnO films was obtained by varying the deposition speed from 500 to 3000 rpm. The electrical properties of MIS showed different I-V curve when using different thickness of the semiconductor layer. The AFM image of all ZnO films showed different morphology. The surface roughness of ZnO films were increased as the deposition speed decreased.

Metadata

Item Type:	Thesis (Degree)
Creators:	Creators Email / ID Num. Adnan, Safarina UNSPECIFIED
Contributors:	Contribution Name Email / ID Num. Thesis advisor Mohamad, Zulfakri UNSPECIFIED
Subjects:	T Technology > TK Electrical engineering. Electronics. Nuclear engineering
Divisions:	Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme:	Bachelor of Electrical Engineering (Hons.)
Keywords:	PMMA: TiO2, ZnO films, metal-insulator-semiconductor (MIS).
Date:	2013
URI:	https://ir.uitm.edu.my/id/eprint/114381