Effect of annealing temperature for p-type polysilicon of PMOS structure / Mohd Ikhsan Kamarudin

The various annealing temperatures were applied on the doped using BF2 + Polysilicon as PMOS structure using SILVACO TCAD (Technology Computer Aided Design) software. The electrical properties obtained from ID-VGS curve effect of annealing temperature for PMOS structure were analyzed. The deposition of temperature was fixed but the annealing temperatures were varied from 900oC until 1000oC. The electrical currentvoltage (IV) response was measured and observed that it is strongly depends on the annealing temperature BF2 + Polysilicon that was applied. In this experiment, it is found that annealing temperature at 1000oC gives highest conductivity in PMOS. The conductivity gradually increased when the annealing temperature increased, while the resistivity is gradually decreased.