Abstract
A humidity sensor is produced by deposited two layers of thin films on glass substrate. The bottom layer was Zinc Oxide (ZnO) and the top layer was Tin Oxide (SnO2) using a Physical Vapor Deposition (PVD) and Thermal Chemical Vapor Deposition (TCVD) process respectively. The properties of nanostructure ZnO/SnO2 thin film for humidity sensors are presented. The humidity sensor thin film will absorbs the humidity in the air and causing current flow through it. In this project, has been focused on the electrical and structural properties of ZnO/SnO2 thin film. The effects of variation of temperature from 400oC until 550oC on the ZnO/SnO2 thin film properties have been investigated. This project involves 3 processes which are thin film preparation, deposition and characterization. The thin films were characterized using Current-Voltage (I-V) Measurement for electrical properties. The surface morphology has been characterized by Field Emission Scanning Electron Microscope (FESEM). The result of IV measurement showed that electrical properties of ZnO/SnO2 optimum at temperature of 400oC. The FESEM characterization on the thin film shows that the nanoparticles size of ZnO/SnO2 increasing as the temperature increase.
Metadata
Item Type: | Thesis (Degree) |
---|---|
Creators: | Creators Email / ID Num. Masuan, Fawzan UNSPECIFIED |
Contributors: | Contribution Name Email / ID Num. Thesis advisor Mohamad, Rusop UNSPECIFIED |
Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering |
Divisions: | Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering |
Programme: | Bachelor of Electrical Engineering (Hons.) |
Keywords: | Humidity sensor, Zinc Oxide (ZnO), Tin Oxide (SnO2). |
Date: | 2011 |
URI: | https://ir.uitm.edu.my/id/eprint/114138 |
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