Sputtering pressure and oxygen ratio dependence of zinc oxide thin films deposited on teflon substrate

This project studied on the characteristics of the Zinc Oxide (ZnO) thin films deposited onto polytetrafluoroethylene (teflon) substrate by using radio frequency(RF)magnetron sputtering technique. The effects of deposition pressure and percentage of oxygen, O2 ratio on the structural, optical and electrical properties of ZnO thin film were investigated. The sputtering pressure was varied from 5, 10, 13, to 15 mTorr andtheO2ratio 0 %, 10 %, 20 %, and 30 %. The structural, optical, and electrical properties of the film were investigated by Field Emission Scanning Electron Microscopy (FESEM) andX-ray Diffraction (XRD) with CuKα radiation, JASCO UV-VIS/NIR Spectrophotometer, and Current Voltage (I-V) Measurement respectively. The surface morphology reveals that deposited ZnO consists of nanoparticles. The thickness and deposition rates of thin films were decreased with increasing pressure and O2 ratio. The crystal structure at 0%of O2 ratio has the highest peak compared to others percentage of oxygen. Also, the thin films showed the optical transmittance between range 45 %to 85 %. Optical measurements indicate the existence of band gap allowed optical transition with corresponding energy gap in the range of 3.28 - 3.34 eV. The deposition of ZnO thin films at different percentage of O2 gave more effects compared to the deposited ZnO thin films as shown in the results observed.