Electrical properties of zinc oxide (ZnO) nanorods for FET applications

Mohd Azalli, Nur Adzzida (2012) Electrical properties of zinc oxide (ZnO) nanorods for FET applications. [Student Project] (Unpublished)

Abstract

Zinc oxide (ZnO) nanorods have being growth using chemical bath deposition (CBD) method. This is done to investigate the consequences of different annealing temperature and different volume of solutions to the electrical properties of zinc oxide (ZnO) nanorods. The chemical bath deposition (CBD) method is normally used to deposit such as thin films and nanomaterials. There are many advantages using this method such as low cost technique and it is not depending on the expensive equipments. Other than that, it has low process temperature and easy to conduct the process. This study covered three processes which are preparation of Magnesium Zinc Oxide (MgZnO) solution for seed layer deposition by using sol-gel spin coating technique, preparation of Zinc Oxide (ZnO) solutions for ZnO nanorods deposition using chemical bath deposition (CBD) method and for metallization purposed, thermal electron beam evaporator has been employ to deposit alumium as a metal contact. The current-voltage (IV) characteristic has been determined by using IV probe measurement system while optical properties have been analyzed by using Perkin Elmer (LAMBDA 750) UV-VIS Spectrophotometer. The surface morphologies of ZnO nanorods were examined by using FESEM JOEL JSM-7600F while the crystallinity was determined using Rigaku Ultima IV X-Ray Diffraction (XRD). The result depicts that with different annealing temperature, it showed that sample that annealed at 500°C has the highest conductivity (low resistivity) and highest optical transmittance due to the manipulation contact resistance. Meanwhile, with the different volumes of solutions, it depicts that 50ml gave the conductive behaviour compare to the other volumes but for the transparent to visible light, 200ml gave the best result due to highest optical transmittance. As far for the concern, the molarity 0.05M does not change the density.

Metadata

Item Type: Student Project
Creators:
Creators
Email / ID Num.
Mohd Azalli, Nur Adzzida
UNSPECIFIED
Contributors:
Contribution
Name
Email / ID Num.
Advisor
Mahmood, Mohamad Rusop
UNSPECIFIED
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Apparatus and materials > Semiconductors
T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Applications of electronics
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme: Bachelor of Engineering (Hons) Electronic
Keywords: Zinc oxide, Metal-oxide-semiconductor, Field-effect-transistor
Date: 2012
URI: https://ir.uitm.edu.my/id/eprint/114067
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