Deposition of undoped amorphous carbon thin film on insulator glass substrave by bias assisted thermal-CVD system

The main objective of this study is to deposit and characterized the deposited amorphous carbon (a-C) thin films. a-C thin films were deposited by Bias Assisted Thermal Chemical Vapor Deposition (CVD) using ethanol as precursor at various deposition temperatures on glass substrates. The deposition temperature was varied from 300-500°C for 5 samples. The deposited a-C thin films were characterized by Solar Simulator System, UV-VIS-NIR Spectrophotometer and Atomic Force Microscopy (AFM). This study was focusing on electrical properties of a-C thin films supported by optical properties and surface morphology. Amorphous carbon thin film deposited at 500°C has the highest conductivity (2.69237x10-6). This is supported by the optical properties whereby the optical band gap energy increase to 3.07 eV for a-C thin film deposited at 500°C. The AFM images show that, density and uniformity have correlated with the resistivity and conductivity for undoped amorphous carbon thin films deposited at various temperatures.