Ismail, Anis Ataillah
(2010)
Photoconductivity study of TiO2 thin films annealed in oxygen ambient: article / Anis Ataillah Ismail.
pp. 1-6.
Abstract
The TiO2 thin films have been prepared on microscope glass substrate using sol-gel dip coating method annealed at different oxygen flow rate from 0 to 2.3 l/min. The thin films were characterized using Current–Voltage (I–V) measurement, UV–Vis-NIR spectrophotometer and SEM. UV–Vis-NIR spectra reveals all films exhibit high transmission (>60%) in UV-NIR region. From I-V measurement result, the electrical properties were studied in dark and under illumination as a function of oxygen flow rate. Introduction of oxygen in TiO2 based coatings induces an increase of their electrical resistivity. The reduction of TiO2 thin film’s hardness with increase of the oxygen flow rate is discussed based on film structure that shown by SEM.
Metadata
| Item Type: | Article |
|---|---|
| Creators: | Creators Email / ID Num. Ismail, Anis Ataillah anis_rinz@yahoo.com.my |
| Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electric heating. Resistance heating |
| Divisions: | Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering |
| Page Range: | pp. 1-6 |
| Keywords: | TiO2 ,Sol gel Dip Coating Method, I–V measurement, UV–Vis-NIR spectrophotometer, SEM |
| Date: | 2010 |
| URI: | https://ir.uitm.edu.my/id/eprint/105322 |
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