Influence of deposition temperature on electrical and optical properties of boron doped amorphous carbon thin films by positive bias- assisted pyrolysis-CVD: article / Muhammad Hazimin Mat Rani

Boron-doped amorphous carbon thin films were deposited on glass substrates by positive bias-assisted pyrolysis-CVD at various deposition temperatures in the range of 200oC-350oC and characterize the electrical properties of deposition structured aC thin film. The electrical, optical and structural properties were characterized by using current voltage (I-V) measurement, UV-VIS/NIR spectrophotometer and Atomic Force Microscopy (AFM). The electrical conductivity of amorphous carbon thin films increased as the temperature increased. The highest and lowest photo responses were found at 300oC. The resistivity is lower and thus gives the conductivity of a-C thin films increased due to the relation between the resistivity and conductivity are inversely proportional. These results show that there is the possibility to improve the electrical for the application of solar cell.