Electrical properties of nanostructured zinc oxide thin film prepared by sol-gel method for humidity sensor applications / Mawarni Suci Mansor

This technical paper investigates the electrical properties of the ZnO nanostructures that have been prepared by the sol-gel method. The influence of annealing temperature on the surface morphologies and electrical properties of the nanostructured ZnO was characterized by Scanning Electron Microscopy (SEM) and I-V measurement. The sol-gel method produced the nanostructured ZnO that have the single nanorods particles mixed with some cluster of rods. The size of particles was decreasing as the temperature of the annealing process was higher. The I-V measurement studies demonstrate that the current measured for sample that have been annealed at 700°C was high compared to the other samples that have been annealed at 500°C and 600°C. This studies also shows that the 0.002M of concentration having higher sensitivity than 0.004M of concentration.