Post annealing temperature effect on photoluminescence spectroscopic of nanostructured ZnO thin film by TCVD method / Mohd Hafiz Rifqi Abd Halim

This article summarizes briefly some important achievement from research on the effect of annealing temperature on the structural, electrical as well as photoluminescence (PL) properties of nanostructure ZnO thin film grown on ZnO template. The template were prepared by the spin-coating method. The ZnO thin films were deposited by thermal chemical vapor deposition (TCVD) technique using Zinc acetate dihydrate as a precursor. Deposited films are annealed at various temperatures from 650°C to 850°C. The optical properties are characterized using photoluminescence (PL) with 325nm UV light from a He-Cd laser at room temperature and the electrical properties are characterized using Solar simulator measurement unit. Field emission scanning electron microscopy (FESEM) used to determine the surface morphology of the samples.