Effect of annealing temperature on titanium dioxide (TIO2) thin film by sol-gel method / Angelina Viviana Harry

Titanium dioxide (Ti02) thin films were successfully deposited on glass substrates by sol-gel method and spin-coating technique with various annealing temperature. The thin films were annealed at 250°C, 350°C, 450°C and 550°C while as deposited thin film was used as a reference sample. Electrical properties of TiCh thin films will be measured by using I-V measurement system It was found the resistivity of thin film at annealing temperature 450°C has the lowest resistivity (6.7 x 10"]Q.m) and optical spectra transmittance (94%). This will effects the value of conductivity of thin film which is 14.9 x 103 (Q.m)_1. For optical properties, optical band gap and absorption coefficient were calculated using Tauc's plot and Lambert equation. While, surface morphology and roughness of thin films were characterized to determine using Atomic Force Microcopy (AFM) the structural properties of thin films. The optical band gap is in range between 3.90eV to 3.99eV. Thin film annealed at temperature at 450 °C shows low optical band gap (3.99eV) due to high roughness and good uniformity of surface morphology.