Effect of annealing process on dielectric properties of sol-gel derived lead titanate thin film / Muhammad Saifuddin Abu Bakar

The PT thin films have been deposited on silicon substrates using sol-gel spin coating method. The dielectric properties of the thin films annealed at different annealing temperatures and times were then investigated. The dielectric properties and resistivity of the film was measured using LCR meter and four point probe respectively. The relationship between dielectric constant and tangent loss were observed. The dielectric constant exhibits inverse relationship with tangent loss and strongly affected by annealing time and temperature. High annealing temperature caused high dielectric constant and low tangent loss. In this research, samples annealed at 700C resulted in dielectric constant and loss of 44 and 0.1 respectively. The resistivity of the films was measured to be 1.34x104 Ωm.