Investigation on P-N junction I-V characteristics of p-Si/n-TiO2 / Mohd Farhan Azwa Alias

The effect of annealing time on electrical properties and physical properties (surface morphology) of p-n junction between p-type silicon (Si) and n-type titanium oxide (TiC^) were investigated. By varying the parameter of the annealing time, the Ti02 thin films were deposited on silicon and glass substrates by using spin coating technique. Characterizations were done using current-voltage (I-V) measurement and atomic force microscope (AFM).The TiC>2 thin films were annealed at the 450°C. The annealing time varies from 30, 40, 60, 80, and 100 of minutes. The (I-V) measurement showed that at 80 minutes annealing time, the conductivity is higher than other annealing time. The AFM investigation showed roughness of thin film increase with longer annealing time. The result showed that the electrical and physical properties of TiO; could be affected by changing the annealing time.