Abstract
Nanostructured Aluminum (Al) doped Zinc Oxide (ZnO) thin films were prepared on glass substrates using immersion technique and the effects of immerse times on the nanostructured ZnO properties were investigated. The processes which involve producing nanostructured ZnO thin films in this research were preparation of Al doped ZnO thin film as seeded catalyst by sol-gel spin-coating method, preparation of nanostructured Al doped ZnO by immersion technique and fabrication of nanostructured Al doped ZnO based ultraviolet (UV) photoconductive sensor. Surface morphology results as characterized by scanning electron microscope (SEM) show that all prepared nanostructured Al doped ZnO were in form of nanorod structures with the typical diameter in the range of 60-250nm and the length within several micrometers. UV-Vis-NIR spectra indicate that the transmittance of the samples decrease with immersion time. Electrical properties study reveals the nanostructured Al doped ZnO thin film at I hr shows the highest conductivity compared to other samples. Photocurrent measurement results of the fabricated samples show that UV photoconductive sensor from nanostructured Al doped ZnO thin film immersed at 1 hr gives the highest photocurrent intensity compared with other sample.
Metadata
Item Type: | Thesis (Degree) |
---|---|
Creators: | Creators Email / ID Num. Muhamed, Siti Zanariah UNSPECIFIED |
Contributors: | Contribution Name Email / ID Num. Thesis advisor Mohamad Rusop, Mahmod UNSPECIFIED |
Subjects: | T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Apparatus and materials > Detectors. Sensors. Sensor networks |
Divisions: | Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering |
Programme: | Bachelor of Electrical Engineering (Hons.) Electronics |
Keywords: | Aluminum (AI), doped zinc oxide (ZnO), UV-Vis-NIR |
Date: | 2009 |
URI: | https://ir.uitm.edu.my/id/eprint/102779 |
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