Performance analysis of a wideband LNA utilizing 0.18um technology with HBM ESD Protection / Nor Aida Nordin

Nordin, Nor Aida (2010) Performance analysis of a wideband LNA utilizing 0.18um technology with HBM ESD Protection / Nor Aida Nordin. Degree thesis, Universiti Teknologi MARA (UiTM).

Abstract

The following report presents the performance analysis of wideband low noise amplifier (LNA) design circuits utilizing 0.18]uin CMOS technology. The objective of this performed analysis of a LNA design that need achieve sufficiently large gain and low noise figure, compare the design with other design, and to verify the effect of parameter Rr and Ls to S-parameter. This LNA design was expected to achieve a peak power gain of 13.8 dB. Within the 3 dB bandwidth from 2.6 GHz to 6.6 GHz, the noise figure (NF) is in a range of 4.0 dB to 6.5 dB and the input reflection coefficient, Sn is below -13.0dB.The standard specification for LNA with bandwidth from 2.6GHz is ISDB. This usually used for digital audio and video broadcasting application. By using Cadence Virtuoso as an EDA tool as a simulation tool, the result are obtained. The simulation result had almost achieved the target and this analysis had performed successfully simulation.

Metadata

Item Type: Thesis (Degree)
Creators:
Creators
Email / ID Num.
Nordin, Nor Aida
2007270672
Contributors:
Contribution
Name
Email / ID Num.
Advisor
Mohamad, Maizan
UNSPECIFIED
Subjects: Q Science > QC Physics > Electricity and magnetism > Electricity > Electric discharge
T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Electrical Engineering
Programme: Bachelor of Electrical Engineering (Honours)
Keywords: CMOS, electrostatic discharge (ESD), low noise amplifier (LNA), wideband
Date: 2010
URI: https://ir.uitm.edu.my/id/eprint/102745
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