Electrical characteristics of aluminium doped nanostructured TiO2 thin film by Sol-gel method spin coating / Khairul Anuar Kasbi

The study have been conducted on Electrical Characteristics of Aluminum Doped Nanostructured TiO2 Thin Film. In this research, it have been prepared by a method known as Sol-gel method. Titanium dioxide (TiO2) thin films have been deposited on glass substrates using titanium Butoxide as a precursor. This research have been investigated on the different concentration of Aluminium doped Nanostructured Titanium Dioxide (TiO2) thin film from 1% to 5% by (molar percentage). The results in terms of electrical characteristics of the Aluminium doped Nanostructured TiO2 thin film layer have been studied. When the concentration of doping Aluminium increased, the conductivity were increased and the resistivity were decreased. This is because Aluminium is one of the agent of conductivity. The spectral absorbance of undoped TiO2 and Al doped TiO2 thin films deposited on glass were measured in the wavelength range from 300 to 800 nm. The value of absorbance were increase rapidly within wavelength of 300 nm and 350 nm. The influences of different concentration of aluminium on the surface morphologies and electrical characteristics of the nanostructured TiO2 were characterized by Scanning Electron Microscopy (SEM) and Current-Voltage (I-V) measurement. The optical properties of different concentration of aluminium of the nanostructured TiO2 were characterized by UV-VIS Spectroscopy as well.