Electrical characterization of poly-si thin film solar cells deposited on textured substrate / Riza Muhida and Agus Geter Edy Sutjipto

Textured substrate widely used for developing high performance poly-Si solar cells, due to surface texture of a transparent conductive oxide (TCO) layer on a glass substrate is usually utilized for the light trapping technique, which achieve a large photocurrent of the poly-Si material. The electrical conductivities of the poly-Si thin films deposited on the substrates with different surface texture have been studied using the alternating current (AC)conductivity measurement technique. The measurement results show that the activation energy of the dark conductivities for poly-Si films with deposited on relative low of the root mean square (rms) roughness (s) of 22 nm is close to 0.55 eV indicating intrinsic nature. On other hand, with increase in s>37 nm, poly-Si films exhibit n-type character. Changes in electrical conductivities of the poly-Si thin films in conjunction with the results on photovoltaic performances, optical reflectance, and microstructure are also discussed.