Influence of heat treatment on the properties of MgO thin films as dielectric layer / Habibah Z. ... [et al.]

Physical properties such as high melting point, low heat
capacity and high bonding strength of magnesium oxide, MgO
could be get give an advantage to MgO to be used as the
dielectric layer. Besides that, MgO also has large band gap (7.8
eV) and high dielectric constant (9.8) could be potentially used as
a buffer layer for ferroelectric material. In this work, MgO with
0.2M concentration were prepared using sol-gel technique.
Magnesium acetate tetrahydrate, ethanol and nitric acid used as
precursor, solvent and stabilizer respectively. The MgO solutions
were then deposited on the cleaned glass by using spin-coating
technique. The thin film deposition is repeated for 8 times for
uniformity purpose. The electrical and dielectric properties of
MgO are identified by observing its resistivity, dielectric
constant, dielectric loss and its surface morphology in terms of
annealing temperature. Since high deposition temperature is
needed in order to obtain high quality of MgO films and also due
to the limitation of glass, the annealing temperature is varied
from 400°C to 500°C with 25°C interval. The experimental
results show that annealing temperature is inversely proportional
to the thickness of MgO films due to the merging activity of the
particle. MgO film annealed at 500ºC has been chosen as a good
dielectric layer since it has a good electrical, dielectric and
structural properties.