Optical and structural properties of zinc oxide thin film annealed at different temperature / Rabiatul Adawiah Ahmad Rashaidi

Ahmad Rashaidi, Rabiatul Adawiah (2008) Optical and structural properties of zinc oxide thin film annealed at different temperature / Rabiatul Adawiah Ahmad Rashaidi. [Student Project] (Unpublished)

Abstract

Zinc oxide (ZnO) thin films deposited on silicon and glass substrate were prepared using chemical vapor deposition (CVD) method utilizing zinc acetate dehydrate as the zinc sources. The deposited film then annealed at 300°C to 500°C for 1 hour. The optical and structural properties of ZnO thin films were characterized using photoluminescence (PL) and Scanning Electron Microscopy (SEM) respectively. SEM images show that the ZnO thin film on silicon substrate formed unique morphology of flower-like and ball-shaped structures at annealing temperature 300°C and 400°C. Increasing annealing temperature to 450°C for ZnO deposited on glass substrate had increased the grain size of particle which implies the improvement of crystalline grain of thin film. PL results observed that the defect of oxygen vacancy decreased after annealing process for films deposited on silicon substrate. The blue peak emission at 437 nm appears only on the glass substrate. Based on the highest PL intensity value, the optimum annealing temperature for silicon and glass substrate is 350°C and 450°C respectively.

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Item Type: Student Project
Creators:
Creators
Email / ID Num.
Ahmad Rashaidi, Rabiatul Adawiah
UNSPECIFIED
Contributors:
Contribution
Name
Email / ID Num.
Thesis advisor
Abdullah, Saifollah (Assoc. Prof. Dr.)
UNSPECIFIED
Subjects: Q Science > QC Physics > Optics. Light > Optical instruments and apparatus
Q Science > QC Physics > Optics. Light > Physical optics
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Applied Sciences
Programme: Bachelor of Science (Hons.) Physics
Keywords: Zinc oxide (ZnO), Silicon, Glass substrate, Chemical vapor deposition (CVD)
Date: 2008
URI: https://ir.uitm.edu.my/id/eprint/48704
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