The effect of current density on nanostructured porous silicon / Nurul Ilham Adam

Adam, Nurul Ilham (2008) The effect of current density on nanostructured porous silicon / Nurul Ilham Adam. [Student Project] (Unpublished)

Download

[thumbnail of 48695.pdf] Text
48695.pdf

Download (128kB)

Abstract

The work presents the effect of the current density on nano-structured porous silicon through the electrochemical etching process using Hydrofluoric acid (HF) and Ethanol (CH2OH) at ratio 1:1. In this research, the current density is increased during the anodization process regarding the etching time and the distance of the electrode are constant. Atomic Force Microscope (AFM) measurement and Photoluminescence Spectrometer (PL) analysis were performed to investigate the physical and the optical characteristics of the interface region of porous silicon. The result shows that the roughness of the porous silicon surface was increased when the current density increased. The PL measurement indicates that the PL intensity and the Photon energy increased with the increasing value of current density. This research discovers that the current density has large effect on the nanostructured porous silicon on the structural and optical properties.

Metadata

Item Type: Student Project
Creators:
Creators
Email
Adam, Nurul Ilham
UNSPECIFIED
Contributors:
Contribution
Name
Email / ID Num.
Thesis advisor
Abdullah, Saifollah (Prof. Dr.)
UNSPECIFIED
Subjects: Q Science > QC Physics > Atomic physics. Constitution and properties of matter > Nanostructures
Q Science > QC Physics > Electricity and magnetism
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Applied Sciences
Programme: Bachelor of Science (Hons.) Physics
Item ID: 48695
Uncontrolled Keywords: Current density, Nano-structured, Porous silicon
URI: https://ir.uitm.edu.my/id/eprint/48695

Fulltext

Fulltext is available at:
  • Koleksi Akses Terhad | PTAR Utama | Shah Alam
  • ID Number

    48695

    Indexing


    View in Google Scholar

    Edit Item
    Edit Item