Investigate effect of the scaling on MOS capacitor using capacitance measurement / Wan Mohamad Rosihan Wan Aziz

Wan Aziz, Wan Mohamad Rosihan (2010) Investigate effect of the scaling on MOS capacitor using capacitance measurement / Wan Mohamad Rosihan Wan Aziz. [Student Project] (Unpublished)

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Abstract

The effects of the scaling on MOS capacitor using capacitance measurement were ascertained. The effects of different size of gate oxide (0.01cm2, 0.04cm2, 0.09cm2, 0.16cm and 0.25cm ) on MOS capacitor were determined. It is not easy in order to produce ideal (theory) MOS capacitor when the dimension is scaled down. The qualities of oxide that produce always give effect to performance of device. The oxide layer need free from particle such contamination and fixed charge in order to produce ideal MOS capacitor. Besides that, fabrication of small device is difficult due to some limitation which is equipment capability and clean room environment. Five different sizes of gate oxides of MOS capacitor were fabricated on 4 inch n-type wafer and their effects were studied based on their capacitance value. All critical process to fabricate this device such cleaning, oxidation, lithography and metallization were done in UiTM Shah Alam semiconductor laboratory. According to the experiment result, working MOS capacitor successful fabricated on 4 inch n-type wafer. From experimental C-V curve, we can say that smaller gate oxide of MOS capacitor is recommended to produce better MOSFET-in term of speed.

Metadata

Item Type: Student Project
Creators:
Creators
Email
Wan Aziz, Wan Mohamad Rosihan
UNSPECIFIED
Contributors:
Contribution
Name
Email / ID Num.
Thesis advisor
Zakaria, Azlan
UNSPECIFIED
Subjects: Q Science > QC Physics > Heat
Q Science > QC Physics > Heat > Temperature measurements
Q Science > QC Physics > Electricity and magnetism > Electricity
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Applied Sciences
Programme: Bachelor of Science (Hons.) Industrial Physics
Item ID: 47993
Uncontrolled Keywords: Scalling, MOS capacitor, Oxidation, Lithography, UiTM Shah Alam
URI: https://ir.uitm.edu.my/id/eprint/47993

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