Effects of Mg2ti03 (Mt) addition on dielectric properties of CaCu3Ti40i2 (CCTO) / Shaidatul Fahana Tajuddin

This project studied the effect of MgTi03 (MT) addition on CaCu3Ti40i2 (CCTO). Recently an oxide ceramic CCTO was reported that exhibits very high dielectric constant value, which is desirable for many microelectric applications. However, the dielectric loss of the material is relatively and become less useable. Therefore, in this work, CCTO is doped with MT in order to lower the dielectric loss. The MT-doped CCTO was prepared by using solid state reaction method. The MT doped with CCTO, calcining at 1000°C for 12 hours and sintered at 1100°C for 24 hours. Effect of MT dopant to the dielectric properties of CCTO had been studied. The high dielectric constant and low dielectric loss was observed at 0.1, and 0.2 MT dopant compared from its pure samples (X= 0). However for 0.3 MT dopant was dropped from high value of dielectric constant to the lowest value and result in high dielectric loss. Over the wide frequency range, 0.1 MT was more stable then other samples that always present high dielectric constant and low dielectric constant compared with undoped CCTO and other sample. This result indicates that certain MT dopant can be used to improve the dielectric properties of CCTO.