Temperature dependence of photoluminesce for porous silicon / Asma Ishak

Temperature dependence of photoluminescence for Porous Silicon (PSi) is reported. The objectives of this project are to produce Porous Silicon sample with optimum photoluminescence parameter (photoluminescence intensity), to determine the photoluminescence properties at different temperatures, and to explain the luminescence phenomenon of Porous Silicon at different temperatures. Significance of the project is studying the luminescence phenomenon for temperature dependent of photoluminescence of Porous Silicon. Scope for this project covers identifying and characterizing of the sample of Porous Silicon by using the Photoluminescence Spectroscopy (PL) under various temperatures and in X-Ray Diffraction (XRD). The temperature at which silicon is electrochemically etched has been found to influence the structure and photoluminescence properties of Porous Silicon. A different temperature dependence of the emission intensity from the Porous Silicon over the (83-303) K temperature intervals is achieved. Intensity decreases with temperature increases from low to high temperature. Besides that, the different etching time has the different degree of crystalline in surface of Porous Silicon that have crystallographic orientation with a broad peak. The luminescence phenomenons of photoluminescence also are explained by the intensity of movement electrons.