Photoluminescence study of porous silicones) doped with copper(Cu) / Nor Ashiken Othman

Porous silicon (PS) is a form of chemical element silicon which has introduced nano-porous holes in its microstructure, have large surface to volume. PS composed of highly interconnection matrix of nanometer size silicon crytals and the pores structure of silicon are etched into the substrate in size of nano to micro meter produced by anodization, chemical stain etching, drying porous silicon and other method. The electrochemical etching process that used in the research is to prepare samples of porous silicon (PS). Five samples are prepared. One of the sample use as a reference sample. The four PS doped with copper(Cu) using immersion process. The all samples are characterized by using Photoluminescence (PL) Spectroscopy and Atomic Force Microscopy (AFM). From the PL spectroscopy result, the reference sample(undoped) is higher intensity than the doped sample. Between the four samples are doped with Cu, one of the sample is higher at 0.025% and the lowest sample at the 0.020%. Additional, from the result AFM show that the grain size sample at 0.025% is small between the grain size at 0.020% is high. As a conclusion, the wavelength the PS doped with Cu have a red luminescence between 650-680nm. So when doped with the Cu give the best wavelength.