Effects of Cr substitution at Ti-Site on dielectric properties of CaCu₃Ti₄0₁₂ (CCTO) / Syamimi Muhamad

The study of the effect of Cr substitute at Ti-Site on CaCu₃Ti₄0₁₂ (CCTO) will be carried out. The previous report shows that CaCu₃Ti₄0₁₂ (CCTO) has been found to show that it has a very high dielectric constant at room temperature. This characteristic makes it potentially useful for important applications in microelectronics and memory devices. However, the dielectric loss of material becomes less useable. According to this problem, this project Cr substitute at Ti-Site on CaCu₃Ti₄0₁₂ (CCTO) to lower the dielectric loss. The Cr substitute at Ti-Site on CCTO was prepared by using the solid-state reaction method. The Cr substitute at Ti-Site on CCTO, calcining at1000°C for 12 hours, grinding and pellet pressing, and then sintered in air at 1100°C for 24hours. The microstructure of the sample will be investigated by using Scanning Electron Microscope (SEM). From the microstructure, it shows that when the substitution of Cr at Ti-site was increased from pure to x=0.50, it can be seen that the grain size become much smaller. An X-ray diffractometer is employed to determine the phase of a compound of the samples. From the result, it is a single-phase and the sample is crystalline. The Electrical Impedance Spectroscopy (EIS) is used to measure the electrical behavior of each sample. The substitution of Cr at Ti-site on CCTO was improved their dielectric constant and dielectric properties.