Photoluminescence study of ZnO on porous silicon nanostructure / Suhaidah Amizam

Amizam, Suhaidah (2006) Photoluminescence study of ZnO on porous silicon nanostructure / Suhaidah Amizam. Degree thesis, Universiti Teknologi MARA.

Abstract

In this study, porous structures were formed on a p-type of Si wafer by anodization in ethanoic solutions containing aqueous hydrofluoric acid. The parameter for the PSi sample is fixed which are etching time and current density. ZnO deposited onto porous silicon substrates by the sol-gel method were studied. The starting material of the ZnO sol-gel was Zinc acetate. The room temperature photoluminescence (PL) and chemical properties of Psi before and after deposition of ZnO were investigated by using Photoluminescence spectroscopy and Fourier transforms infrared (FTIR) spectroscopy. As prepared PSi emit orange light. The peak position of PSi after deposition of ZnO shifted to blue with a value is around 650 nm. Using the FTIR spectroscopy, we have observed O-H stretch mode for ZnO at 3350 cm¯ᶦ.

Metadata

Item Type: Thesis (Degree)
Creators:
Creators
Email / ID Num.
Amizam, Suhaidah
UNSPECIFIED
Contributors:
Contribution
Name
Email / ID Num.
Advisor
Abdullah, Saifollah (Assoc. Prof. Dr.)
UNSPECIFIED
Advisor
Mahmood, Mohd Rusop (Prof. Dr.)
UNSPECIFIED
Subjects: Q Science > QC Physics > Atomic physics. Constitution and properties of matter
Q Science > QC Physics > Atomic physics. Constitution and properties of matter > Nanostructures
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Applied Sciences
Programme: Bachelor of Science (Hons.) Physics
Keywords: Photoluminescence, Anodization, Aqueous hydrofluoric acid, Fourier transforms infrared (FTIR) spectroscopy
Date: 2006
URI: https://ir.uitm.edu.my/id/eprint/45487
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