Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi

Zahaimi, Nurul Arina (2011) Co relation study of gate oxide thickness and MOSFET I-V characteristic / Nurul Arina Zahaimi. Degree thesis, Universiti Teknologi MARA.

Abstract

A MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a semiconductor device. A MOSFET is most commonly used in the field of power electronics. Silicon dioxide (Si02) is the gate component on N-type Metal Oxide Semiconductor (NMOS) which plays a very important role in transistor operation. Growing Si02 on the wafer substrate can be done by two methods which are by dry and wet oxidation. Hence, this study is to determine the quality of gate oxide produced in the lab and to study the effect of different thicknesses of oxide on MOSFET I-V characteristics. The NMOS is tested with respect to the ideal IV curve characteristic.

Metadata

Item Type: Thesis (Degree)
Creators:
Creators
Email / ID Num.
Zahaimi, Nurul Arina
UNSPECIFIED
Contributors:
Contribution
Name
Email / ID Num.
Advisor
Zakaria, Azlan
UNSPECIFIED
Subjects: Q Science > QC Physics > Electricity and magnetism
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Applied Sciences
Programme: Bachelor of Science (Hons.) Industrial Physics
Keywords: Gate oxide thickness, MOSFET L-V characteristic, Wafer substrate
Date: 2011
URI: https://ir.uitm.edu.my/id/eprint/45468
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