Preparation and characterizations of oxidized nanostructured porous silicon / Noorshafarina Ishak

Ishak, Noorshafarina (2012) Preparation and characterizations of oxidized nanostructured porous silicon / Noorshafarina Ishak. [Student Project] (Unpublished)

Abstract

The oxidized nanostructured porous silicon were produced from thermal oxidation of porous silicon sample which first prepared by electrochemical anodization using Teflon cell at current density, J = 20 mA/cm2. The etching time was the parameter for the preparation of porous silicon and the oxidation time was kept constant for the preparation of oxidized porous silicon. It is revealed that lowest etching time for producing porous silicon is at 6 minutes and maximum oxidation level for oxidized porous silicon is at sample of time etching 10 minutes. The characterizations are using Photoluminescence Spectroscopy, Thickness Profiler, Energy Dispersive Analysis by X-Ray, Fourier Transform Infrared and also Field Emission Scanning Electron Microscopy.

Metadata

Item Type: Student Project
Creators:
Creators
Email / ID Num.
Ishak, Noorshafarina
UNSPECIFIED
Contributors:
Contribution
Name
Email / ID Num.
UNSPECIFIED
Abdullah, Saifollah (Prof. Dr.)
UNSPECIFIED
Subjects: Q Science > QC Physics > Atomic physics. Constitution and properties of matter > Nanostructures
Divisions: Universiti Teknologi MARA, Shah Alam > Faculty of Applied Sciences
Programme: Bachelor of Science (Hons.) Physics
Keywords: Porous silicon, Electrochemical anodization, Photoluminescence spectroscopy
Date: 2012
URI: https://ir.uitm.edu.my/id/eprint/44548
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