Effect of hydrogen peroxide (H202) in porous silicon as nitrogen gas sensor / Tahirah Mat Waijar

The effects of Hydrogen Peroxide (H202) in porous silicon to detect Nitrogen gas were investigated. Three major types and another extra two types of PSi samples have been prepared. One of the PSi sample prepared with typical HF anodizing solution and other two major samples anodized with the presence of H202 in 20 minutes (30% and 35% respectively) in the solution. Then, another two samples were prepared with presence of 35% concentration of H202 in 10 minutes and 30 minutes respectively. Samples anodized with H202 solution showed a porous silicon structure with higher porosity compared to those not treated with H202 that shown through micrograph of FESEM. Then, samples that anodized with presence of 35% concentration of H202 in 30 minutes etching time show more porous than sample that used similar solution for 10 minutes etching time. Moreover, effect of H202 based porous silicon sample fabricated as nitrogen gas sensor showed better electrical (I-V) sensitivity compared to those without H202.