Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali

Kasim, Nazirah Mohamat and Ismail, Ahmad Puad and Radzali, Rosfariza (2009) Electrical and material characterization of 0.24 micron CMOS device by using simulation / Nazirah Mohamat Kasim, Ahmad Puad Ismail and Rosfariza Radzali. [Research Reports] (Unpublished)

Abstract

This project is to simulate and analyze the electrical characteristics for 0.24 micron CMOS device using SILVACO TCAD. The objective of the project is basically to simulate the fabrication process and electrical characterization for 0.24 micron CMOS devices. Electrical characteristics were carried out by using Atlas simulator while, simulation of the process is carried out by using Athena process simulator to modify theoretical values and obtain more accurate process parameters. At the device simulation process, the electrical parameter was extracted to investigate the device characteristics. Several design analysis are performed to investigate the effectiveness of the advanced method in order to prevent the varying of threshold voltage. The electrical characteristics produces the graph of drain current versus drain voltage, ID-VD and drain current versus gate voltage, ID-VQ. From ID-VG can be obtained the threshold voltage, VT where VT for NMOS transistor is lower than VT for PMOS transistor which is 0.6695V and -0.9683 V respectively. The gate length, LG obtained from the simulated for NMOS and PMOS are same which is 0.235 micron and it is nearest to the scale for the project can be obtained.

Metadata

Item Type: Research Reports
Creators:
Creators
Email / ID Num.
Kasim, Nazirah Mohamat
UNSPECIFIED
Ismail, Ahmad Puad
UNSPECIFIED
Radzali, Rosfariza
UNSPECIFIED
Subjects: T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics
T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Microelectromechanical systems
T Technology > TK Electrical engineering. Electronics. Nuclear engineering > Electronics > Photoelectronic devices (General)
Divisions: Universiti Teknologi MARA, Pulau Pinang > Permatang Pauh Campus
Keywords: SILVACO TCAD, Versus Drain Voltage, NMOS Transistor
Date: April 2009
URI: https://ir.uitm.edu.my/id/eprint/42010
Edit Item
Edit Item

Download

[thumbnail of 42010.PDF] Text
42010.PDF

Download (96kB)

Fulltext

Fulltext is available at:
  • Bilik Koleksi Akses Terhad PTAR | Kampus Permatang Pauh, Pulau Pinang

ID Number

42010

Indexing

|

Statistic

Statistic details