Deposition of zinc oxide on p-type silicon wafers

The samples of p-type silicon wafers were cleaned and deposited by aluminium as a contact. After deposit of aluminium, wax was placing around the samples as a shield. Zinc oxide was prepared via sol-gel method. Initially, the starting materials, zinc nitrate were weighed out. Then, the materials were dissolved in the ethanol by using magnetic stirrer. Next, zinc oxide was deposited onto p-type silicon wafers by using spin coater to obtain uniform surface. The samples was anneal at different temperatures which were at 270°C, 280°C, 290°C and 300°C to get the purity. Aluminium was deposited once again after annealing process. Finally, all the samples were characterized using scanning electron microscope (SEM), energy dispersive x-ray spectroscopy (EDX) and I-V characteristics. From the result scanning electron microscope (SEM) and energy dispersive x-ray dispersive (EDX) results show the uniform surface of zinc oxide on the samples. I-V characteristic result shows that the samples functioning as a resistor due to the 1-V graph which current is directly proportional to the voltage and thus the zine oxide is p-type semiconductor.