Thermal influence on quantum efficiencies and droop behavior of AlGaN-based DUV-LED

This study investigates the temperature-dependent performance of AlGaN-based deep-ultraviolet lightemitting diodes (DUV-LEDs) emitting at 242 nm, using one-dimensional drift-diffusion simulations. Five device structures were analyzed across a temperature range of 0 °C to 200 °C to evaluate carrier distribution, radiative recombination rates, and efficiency characteristics. Results show that increasing temperature enhances carrier injection and radiative recombination, leading to higher internal and external quantum efficiencies (IQE and EQE), along with a significant reduction in efficiency droop. However, a trade-off is observed, as the maximum IQE and EQE slightly decline at elevated temperatures. These findings highlight the critical role of thermal effects in optimizing the efficiency and stability of DUV-LEDs under high-current operation.